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Electrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8

TitleElectrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8
Publication TypeJournal Article
Year of Publication2009
AuthorsZou M, Pecharsky VK, Gschneidner KA, Mudryk Y, Schlagel DL, Lograsso TA
Journal TitlePhysical Review B
Volume80
Pages174411
Date Published11/01
ISBN Number1098-0121
Accession NumberISI:000272310400055
KeywordsCOLOSSAL MAGNETORESISTANCE, giant magnetoresistance, LOW-TEMPERATURES, magnetic anisotropy, magnetic-, MAGNETOCALORIC COMPOUND, positive magnetoresistance, silicon compounds, solid-state phase transformations, terbium compounds
Abstract

A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb5Si2.2Ge1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance (MR) is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a unique geometric arrangement of the interphase boundaries and large magnetocrystalline anisotropy of the compound.
URL<Go to ISI>://000272310400055
DOI10.1103/Physrevb.80.174411