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High Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices

TitleHigh Efficiency GaN Light-Emitting Diodes With Two Dimensional Photonic Crystal Structures of Deep-Hole Square Lattices
Publication TypeJournal Article
Year of Publication2010
AuthorsShin YC, Kim DH, Kim EH, Park JM, Ho KM, Constant K, Choe JH, Park QH, Ryu HY, Baek JH, Jung T, Kim TG
Journal TitleIeee Journal of Quantum Electronics
Volume46
Pages116-120
Date Published01/01
ISBN Number0018-9197
Accession NumberISI:000272842500001
KeywordsENHANCEMENT, finite-difference time domain method, high-extraction-efficiency, light extraction efficiency, light-emitting diode, nitride-based semiconductor, PHOTONIC CRYSTAL, slabs, spontaneous-emission
Abstract

We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 1.37 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.
URL<Go to ISI>://000272842500001
DOI10.1109/Jqe.2009.2030150