Home » Node » Spontaneous generation of voltage in the magnetocaloric compound Tb5Si2.2Ge1.8 and elemental Gd

Spontaneous generation of voltage in the magnetocaloric compound Tb5Si2.2Ge1.8 and elemental Gd

TitleSpontaneous generation of voltage in the magnetocaloric compound Tb5Si2.2Ge1.8 and elemental Gd
Publication TypeJournal Article
Year of Publication2009
AuthorsZou M, Pecharsky VK, Gschneidner KA, Schlagel DL, Lograsso TA
Journal TitleJournal of Alloys and Compounds
Volume488
Pages550-553
Date Published12/04
ISBN Number0925-8388
Accession NumberISI:000273217900012
Keywordselectronic transport, intermetallics, magnetically ordered materials, magnetocaloric effect
Abstract

The spontaneous generation of voltage (SGV) in single crystalline Tb5Si2.2Ge1.8 and Gd has been studied. Temperature-induced SGVs were observed along the three principal crystallographic axes of Tb5Si2.2Ge1.8, but not in Gd. Field-induced SGVs were observed with magnetic fields less than 40 kOe applied along the a-axis of TB5Si2.2Ge1.8, and the c-axis of Gd. The absence of the temperature-induced SGV in Gd indicates the key role first-order phase transformations play in the appearance of the effect when temperature varies. The anisotropy of the magnetic field-induced SGV in Tb5Si2.2Ge1.8 and the existence of the field-induced SGV in Gd, highlight the importance of the magnetocaloric effect in bringing about the SGV. (C) 2008 Elsevier B.V. All rights reserved.
URL<Go to ISI>://000273217900012
DOIDoi 10.1016/J.Jallcom.2008.09.032