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Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires

TitleStrain Effects in Ge/Si and Si/Ge Core/Shell Nanowires
Publication TypeJournal Article
Year of Publication2011
AuthorsLiu N, Lu N, Yao YX, Li YR, Wang CZ, Ho KM
Journal TitleJournal of Physical Chemistry C
Volume115
Pages15739-15742
Date Published08
Type of ArticleArticle
ISBN Number1932-7447
Accession NumberWOS:000293758700002
Keywordsheterostructures, metals, silicon nanowires
Abstract

Strain-dependent electronic properties of [112] Ge/Si and Si/Ge core/shell nanowires are studied using first-principles calculations within density functional theory. We show that the transition from indirect to quasidirect gap can be obtained by applying compressive strain and the width of the band gap can be tuned by strain. The analysis of the projected density of states indicates that the quasidirect gap is strongly influenced by the atoms in the {111} facets. Several possible applications have been discussed based on their distinguished electronic properties.
DOI10.1021/jp110379n
Alternate JournalJ. Phys. Chem. C