Preferential surface oxidation of Gd in Gd(5)Ge(4)
| Title | Preferential surface oxidation of Gd in Gd(5)Ge(4) |
| Publication Type | Journal Article |
| Year of Publication | 2012 |
| Authors | Yuen CD, Miller GJ, Thiel PA |
| Journal Title | Applied Surface Science |
| Volume | 258 |
| Pages | 2757-2760 |
| Date Published | 01 |
| Type of Article | Article |
| ISBN Number | 0169-4332 |
| Accession Number | WOS:000299162300085 |
| Keywords | Binary alloy, oxidation, silicon, transition, X-ray photoelectron spectroscopy |
| Abstract | Gd oxidizes preferentially at the (0 1 0) surface of Gd(5)Ge(4). This is consistent with thermodynamic data for the bulk oxides. Upon oxidation in vacuum, the gadolinium oxide displaces or covers the Ge. Oxidation is more extensive at 600 K than at 300 K, because more oxygen is incorporated into the surface and the shift of the Gd binding energy is larger. (C) 2011 Elsevier B.V. All rights reserved. |
| URL | <Go to ISI>://WOS:000299162300085 |
| DOI | 10.1016/j.apsusc.2011.10.127 |
| Alternate Journal | Appl. Surf. Sci. |
